2018 International Conference on Solid State Devices and Materials

Sep 9, 2018 - Sep 13, 2018
University of Tokyo

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922 results (411 - 420)

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[N-8-01 (Invited)] Development of GeSn-related group-IV thin films for designing energy band

^○O. Nakatsuka¹, M. Kurosawa¹, W. Takeuchi^1,2, M. Sakashita¹, S. Zaima¹ (1.Nagoya Univ. (Japan), 2.Aichi Inst. Tech. (Japan))

2018 International Conference on Solid State Devices and Materials |Thu. Sep 13, 2018 2:00 PM - 2:30 PM |PDF Download

[N-8-02] Electrical properties of large-grained SiGe on an insulator formed by advanced solid-phase crystallization

^○D. Takahara¹, T. Suemasu¹, K. Toko¹ (1.University of Tsukuba (Japan))

2018 International Conference on Solid State Devices and Materials |Thu. Sep 13, 2018 2:30 PM - 2:45 PM |PDF Download

[N-8-03] Epitaxial Thickening of a Large-grained Ge Layer on Glass for Solar Cell Applications

^○T. Nishida¹, T. Suemasu¹, K. Toko¹ (1.Univ. of Tsukuba (Japan))

2018 International Conference on Solid State Devices and Materials |Thu. Sep 13, 2018 2:45 PM - 3:00 PM |PDF Download

[N-8-04] Ultra-High-Speed Crystallization of Amorphous Silicon Films on Flexible Glass Substrate by Thermal-Plasma-Jet Irradiation Using Cylindrical Rotation Stage

^○W. Nakano¹, H. Hanafusa¹, S. Higashi¹ (1.Hiroshima Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |Thu. Sep 13, 2018 3:00 PM - 3:15 PM |PDF Download

[PS-1-01] Grain-Boundary-Limited Polycrystalline-Silicon Mobility with Negative Temperature Dependence ~ Modeling of Carrier Conduction through Grain-Boundary Traps Based on Trap-Assisted Tunneling ~

^○M. Hogyoku¹, T. Izumida¹, H. Tanimoto¹, N. Aoki¹, S. Onoue¹ (1.Toshiba Memory Corp. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:30 PM - 4:31 PM |PDF Download

[PS-1-02] First-Principles Based Ballistic Transport Simulation of Monolayer and Few-Layer InSe FETs

^○P. Chang¹, X. Liu¹, F. Liu², G. Du¹ (1.Peking Univ. (China), 2.Univ. of Hong Kong (Hong Kong))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:31 PM - 4:32 PM |PDF Download

[PS-1-03] Resonance-enhanced Tunneling Current through Doped Si-p/n Junction; Theoretical Study

^○S. Cho¹, S. Iizuka², T. Nakayama¹ (1.Chiba Univ. (Japan), 2.NIMS (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:32 PM - 4:33 PM |PDF Download

[PS-1-04] First-Principles Study on Shape Degradation during Oxidation Process for Three-Dimensional Structure Devices

^○Y. Yajima¹, K. Shiraishi^2,4, T. Endoh^3,4, H. Kageshima^1,4 (1.Shimane Univ. (Japan), 2.Nagoya Univ. (Japan), 3.Tohoku Univ. (Japan), 4.JST-ACCEL (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:33 PM - 4:34 PM |PDF Download

[PS-1-05] Considering Possible Descriptors for Dipole Moment at High-k/SiO₂ Interfaces

^○M. Perea Causin¹, O. Takahashi¹, S. Kanemaru¹, M. Tomita¹, T. Watanabe¹ (1.Waseda University (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:34 PM - 4:35 PM |PDF Download

[PS-1-06] Mechanism of Ohmic Contacts on Sb- and Bi-based layers on Si and Ge

Y. Guo^1,2, H. Zhang^1,3,^○J. Robertson¹ (1.Cambridge Univ. (UK), 2.Swansea Univ. (UK), 3.Peking Univ. (China))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:35 PM - 4:36 PM |PDF Download

922 results (411 - 420)

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