[A-4-01 (Invited)] Microscopic Mechanism of the Electric-Field Effects on Spintronics Devices Elucidated by X-ray Magnetic Circular Dichroism Spectroscopy

^○M. Suzuki¹, M. Tsujikawa^2,3, T. Nozaki⁴, T. Nakamura¹, M. Shirai^2,3, S. Yuasa⁴, Y. Suzuki^5,6, S. Miwa^5,6,7 (1.JASRI (Japan), 2.RIEC, Tohoku Univ. (Japan), 3.CSRN, Tohoku Univ. (Japan), 4.AIST, Spintronics Res. Center (Japan), 5.Osaka Univ. (Japan), 6.CSRN, Osaka Univ. (Japan), 7.ISSP, Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 10:45 〜 11:15 |PDF ダウンロード

[A-4-02] Study of voltage-controlled magnetic anisotropy (VCMA) in a FeB thin film and a FeB/W multilayer by the Anomalous Hall effect

^○V. Zayets¹, T. Nozaki¹, A. Fukushima¹, H. Saito¹, S. Yuasa¹ (1.AIST (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 11:15 〜 11:30 |PDF ダウンロード

[A-4-03] N-type ferromagnetic semiconductor (In,Fe)Sb with high Curie temperature: Electrical control of ferromagnetism

^○N.T. Tu^1,2, P.N. Hai^3,4, L.D. Anh¹, M. Tanaka^1,4 (1.Univ. of Tokyo (Japan), 2.Univ. of Pedagogy HCMC (Viet Nam), 3.Tokyo Tech (Japan), 4.CSRN Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 11:30 〜 11:45 |PDF ダウンロード

[A-4-04] Current-driven Switching of Antiferromagnets

^○C. Song¹, X. Chen¹, R. Zarzuela², J. Zhang³, W. Jiang¹, F. Pan¹, Y. Tserkovnyak² (1.Tsinghua Univ. (China), 2.UCLA (USA), 3.Huazhong Univ. of Sci. & Tech. (China))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 11:45 〜 12:00 |PDF ダウンロード

[A-5-01 (Invited)] Nonreciprocal Electronic Devices for Matter Waves

^○J. Mannhart¹, D. Braak¹ (1.Max Planck Inst. for Solid State Res. (Germany))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 13:30 〜 14:00 |PDF ダウンロード

[A-5-02] Properties of Shallow Nitrogen Vacancy Centers in Nitrogen Terminated Diamond and Detection of Nuclear Magnetic Resonance

^○T. Sonoda¹, S. Kawai¹, H. Yamano¹, K. Kato¹, J.J. Buendia¹, T. Kageura¹, Y. Ishii¹, K. Nagaoka¹, R. Fukuda¹, T. Okada¹, M. Haruyama^2,3, T. Tanii¹, K. Yamada², S. Onoda², W. Kada³, O. Hanaizumi³, A. Stacey⁴, T. Teraji⁵, S. Kono⁷, J. Isoya⁶, H. Kawarada^1,7 (1.Waseda Univ. (Japan), 2.QST (Japan), 3.Gunma Univ. (Japan), 4.Melbourne Univ. (Australia), 5.NIMS (Japan), 6.Univ. of Tsukuba (Japan), 7.Kagami Memorial Res. Inst. for Materials Sci. and Tech. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 14:00 〜 14:15 |PDF ダウンロード

[A-5-03] Superconducting Boron-doped Diamond Josephson Junction Operating above Liquid He Temperature, 4.2 K

^○S. Amano¹, T. Kageura¹, I. Tsuyuzaki¹, M. Tachiki², S. Oi², K. Hirata², S. Arisawa², H. Osato², D. Tsuya², Y. Takano², H. Kawarada^1,3 (1.Waseda Univ. (Japan), 2.National Institute for Materials Science (Japan), 3.The Kagami Memorial Laboratory for Materials Science and Technology (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 14:15 〜 14:30 |PDF ダウンロード

[A-5-04] New Operation Mode of VO₂-Channel Mott Transistors for Ultra-Sharp ON/OFF Switching

^○T. Yajima¹, T. Nishimura¹, A. Toriumi¹ (1.Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 14:30 〜 14:45 |PDF ダウンロード

[A-5-05] Relaxation Oscillations in a Nonlinearly Driven GaAs MEMS Resonator

^○S. Houri¹, R. Ohta¹, M. Asano¹, Y.M. Blanter², H. Yamaguchi¹ (1.NTT Basic Research Labs (Japan), 2.Delft University of Technology (Netherlands))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 14:45 〜 15:00 |PDF ダウンロード

[A-6-01 (Invited)] Skyrmions in magnetic multilayers: materials physics and device applications

^○W. Jiang¹ (1.Tsinghua Univ. (China))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 15:15 〜 15:45 |PDF ダウンロード