[A-4-01 (Invited)] Microscopic Mechanism of the Electric-Field Effects on Spintronics Devices Elucidated by X-ray Magnetic Circular Dichroism Spectroscopy

^○M. Suzuki¹, M. Tsujikawa^2,3, T. Nozaki⁴, T. Nakamura¹, M. Shirai^2,3, S. Yuasa⁴, Y. Suzuki^5,6, S. Miwa^5,6,7 (1.JASRI (Japan), 2.RIEC, Tohoku Univ. (Japan), 3.CSRN, Tohoku Univ. (Japan), 4.AIST, Spintronics Res. Center (Japan), 5.Osaka Univ. (Japan), 6.CSRN, Osaka Univ. (Japan), 7.ISSP, Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 10:45 AM - 11:15 AM |PDF Download

[A-4-02] Study of voltage-controlled magnetic anisotropy (VCMA) in a FeB thin film and a FeB/W multilayer by the Anomalous Hall effect

^○V. Zayets¹, T. Nozaki¹, A. Fukushima¹, H. Saito¹, S. Yuasa¹ (1.AIST (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 11:15 AM - 11:30 AM |PDF Download

[A-4-03] N-type ferromagnetic semiconductor (In,Fe)Sb with high Curie temperature: Electrical control of ferromagnetism

^○N.T. Tu^1,2, P.N. Hai^3,4, L.D. Anh¹, M. Tanaka^1,4 (1.Univ. of Tokyo (Japan), 2.Univ. of Pedagogy HCMC (Viet Nam), 3.Tokyo Tech (Japan), 4.CSRN Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 11:30 AM - 11:45 AM |PDF Download

[A-4-04] Current-driven Switching of Antiferromagnets

^○C. Song¹, X. Chen¹, R. Zarzuela², J. Zhang³, W. Jiang¹, F. Pan¹, Y. Tserkovnyak² (1.Tsinghua Univ. (China), 2.UCLA (USA), 3.Huazhong Univ. of Sci. & Tech. (China))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 11:45 AM - 12:00 PM |PDF Download

[A-5-01 (Invited)] Nonreciprocal Electronic Devices for Matter Waves

^○J. Mannhart¹, D. Braak¹ (1.Max Planck Inst. for Solid State Res. (Germany))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 1:30 PM - 2:00 PM |PDF Download

[A-5-02] Properties of Shallow Nitrogen Vacancy Centers in Nitrogen Terminated Diamond and Detection of Nuclear Magnetic Resonance

^○T. Sonoda¹, S. Kawai¹, H. Yamano¹, K. Kato¹, J.J. Buendia¹, T. Kageura¹, Y. Ishii¹, K. Nagaoka¹, R. Fukuda¹, T. Okada¹, M. Haruyama^2,3, T. Tanii¹, K. Yamada², S. Onoda², W. Kada³, O. Hanaizumi³, A. Stacey⁴, T. Teraji⁵, S. Kono⁷, J. Isoya⁶, H. Kawarada^1,7 (1.Waseda Univ. (Japan), 2.QST (Japan), 3.Gunma Univ. (Japan), 4.Melbourne Univ. (Australia), 5.NIMS (Japan), 6.Univ. of Tsukuba (Japan), 7.Kagami Memorial Res. Inst. for Materials Sci. and Tech. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 2:00 PM - 2:15 PM |PDF Download

[A-5-03] Superconducting Boron-doped Diamond Josephson Junction Operating above Liquid He Temperature, 4.2 K

^○S. Amano¹, T. Kageura¹, I. Tsuyuzaki¹, M. Tachiki², S. Oi², K. Hirata², S. Arisawa², H. Osato², D. Tsuya², Y. Takano², H. Kawarada^1,3 (1.Waseda Univ. (Japan), 2.National Institute for Materials Science (Japan), 3.The Kagami Memorial Laboratory for Materials Science and Technology (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 2:15 PM - 2:30 PM |PDF Download

[A-5-04] New Operation Mode of VO₂-Channel Mott Transistors for Ultra-Sharp ON/OFF Switching

^○T. Yajima¹, T. Nishimura¹, A. Toriumi¹ (1.Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 2:30 PM - 2:45 PM |PDF Download

[A-5-05] Relaxation Oscillations in a Nonlinearly Driven GaAs MEMS Resonator

^○S. Houri¹, R. Ohta¹, M. Asano¹, Y.M. Blanter², H. Yamaguchi¹ (1.NTT Basic Research Labs (Japan), 2.Delft University of Technology (Netherlands))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 2:45 PM - 3:00 PM |PDF Download

[A-6-01 (Invited)] Skyrmions in magnetic multilayers: materials physics and device applications

^○W. Jiang¹ (1.Tsinghua Univ. (China))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 3:15 PM - 3:45 PM |PDF Download