The Japan Society of Applied Physics

14:30 〜 14:45

[D-1-02] High On/Off Ratio Tunnel Transistor Formed by CVD-grown Bilayer WSe 2/MoSe 2 van der Waals Heterostructures

T. Irisawa1, N. Okada1, W.H. Chang1, M. Okada1, T. Mori1, T. Endo2, Y. Miyata2 (1.AIST (Japan), 2.Tokyo Metropolitan Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.D-1-02