16:15 〜 16:30

[D-4-03] High Performance Three-Terminal Synaptic Transistor based on Ferroelectric Hf_0.5Zr _0.5O₂/Tungsten Disulfide for Neuromorphic Computing

^○L. Chen^1,2, L. Wang^1,2, Y. Peng³, X. Feng^1,2, S. Sarkar⁴, S. Li^1,2, B. Li^1,2, L. Liu⁵, J. Chen⁵, Y. Liu³, G. Han³, K.-W. Ang^1,2 (1.Department of Electrical and Computer Engineering, National Univ. of Singapore (Singapore), 2.Centre for Advanced 2D Materials, National Univ. of Singapore (Singapore), 3.State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian Univ. (China), 4.NUSNNI-NanoCore, National Univ. of Singapore (Singapore), 5.Department of Materials Science and Engineering, National Univ. of Singapore (Singapore))

https://doi.org/10.7567/SSDM.2019.D-4-03