11:00 〜 11:15

[D-6-03] ReS₂ Based High-k Dielectric Stack Charge-Trapping Memory

^○Z.-H. Fan¹, M. Zhang¹, L. Chen¹, Q.-Q. Sun¹, D.W. Zhang¹ (1.Univ. of Fudan (China))

https://doi.org/10.7567/SSDM.2019.D-6-03