Electrical characteristics of 2D MoS2 ferroelectric memory transistor with ferroelectric Hf1-xZrxO2 gate structure

11:15 AM - 11:30 AM

[D-6-04] Electrical characteristics of 2D MoS₂ ferroelectric memory transistor with ferroelectric Hf_1-xZr_xO₂gate structure

^○S. Zhang¹, Y. Liu¹, G. Han¹, J. Zhang¹, Y. Hao¹, X. Wang² (1.Xidian Univ. (China), 2.Nanjing Univ. (China))