11:15 〜 11:30

[D-6-04] Electrical characteristics of 2D MoS₂ ferroelectric memory transistor with ferroelectric Hf_1-xZr_xO₂ gate structure

^○S. Zhang¹, Y. Liu¹, G. Han¹, J. Zhang¹, Y. Hao¹, X. Wang² (1.Xidian Univ. (China), 2.Nanjing Univ. (China))

https://doi.org/10.7567/SSDM.2019.D-6-04