10:45 〜 11:00

[F-6-02] High Carrier Mobility Sn-Doped Ge Thin-Films (< 50 nm) on Insulator by Interface-Modulated Solid-Phase Crystallization at Low-Temperature

^○X. Gong¹, C. Xu¹, T. Sadoh¹ (1.Kyushu Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.F-6-02