The Japan Society of Applied Physics

10:45 AM - 11:00 AM

[F-6-02] High Carrier Mobility Sn-Doped Ge Thin-Films (< 50 nm) on Insulator by Interface-Modulated Solid-Phase Crystallization at Low-Temperature

X. Gong1, C. Xu1, T. Sadoh1 (1.Kyushu Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.F-6-02