Ge / SiGe Multi Quantum Well Fabrication by Using Reduced Pressure Chemical Vapor Deposition

Y. Yamamoto

doi:https://doi.org/10.7567/SSDM.2019.F-6-03

11:00 〜 11:15

[F-6-03] Ge / SiGe Multi Quantum Well Fabrication by Using Reduced Pressure Chemical Vapor Deposition

^○Y. Yamamoto¹, O. Skibitzki¹, M.A. Schubert¹, M. Scuderi^1,2, F. Reichmann¹, M. Zöllner¹, G. Capellini^1,3, B. Tillack^1,4 (1.IHP-Leibniz Institut für Innovative Mikroelectronik (Germany), 2.Istituto per la Microelettronica e Microsistemi (CNR-IMM) (Italy), 3.Univ. degli Studi Roma Tre (Italy), 4.Technische Univ. Berlin (Germany))

https://doi.org/10.7567/SSDM.2019.F-6-03

2019 International Conference on Solid State Devices and Materials

[F-6-03] Ge / SiGe Multi Quantum Well Fabrication by Using Reduced Pressure Chemical Vapor Deposition