Characteristics of Scaled CAAC-IGZO FET and Its Application to LSI

K. Kato

doi:https://doi.org/10.7567/SSDM.2019.G-1-01

2:00 PM - 2:30 PM

[G-1-01 (Invited)] Characteristics of Scaled CAAC-IGZO FET and Its Application to LSI

^○K. Kato¹, H. Kunitake¹, T. Onuki¹, K. Tsuda¹, S. Ohshita¹, D. Shimada¹, Y. Yanagisawa¹, T. Murakawa¹, T. Atsumi¹, S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd. (Japan))

https://doi.org/10.7567/SSDM.2019.G-1-01

2019 International Conference on Solid State Devices and Materials

[G-1-01 (Invited)] Characteristics of Scaled CAAC-IGZO FET and Its Application to LSI