Inverter Using CAAC-IGZO FET with 60-nm Gate Length Fabricated in BEOL

H. Kunitake

doi:https://doi.org/10.7567/SSDM.2019.G-1-03

14:45 〜 15:00

[G-1-03] Inverter Using CAAC-IGZO FET with 60-nm Gate Length Fabricated in BEOL

H. Kunitake¹, ^○T. Koshida¹, K. Ohshima¹, K. Tsuda¹, N. Matsumoto¹, S. Ohshita¹, Y. Okazaki¹, T. Murakawa¹, T. Atsumi¹, T. Nakura², K. Kato¹, S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd. (Japan), 2.Fukuoka Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.G-1-03

2019 International Conference on Solid State Devices and Materials

[G-1-03] Inverter Using CAAC-IGZO FET with 60-nm Gate Length Fabricated in BEOL