Grain Growth Control with a Dot Mask in Selective Laser Annealing for Stable LTPS Thin Films Transistors Fabrication

K. Imokawa

doi:https://doi.org/10.7567/SSDM.2019.G-2-02

16:15 〜 16:30

[G-2-02] Grain Growth Control with a Dot Mask in Selective Laser Annealing for Stable LTPS Thin Films Transistors Fabrication

^○K. Imokawa^1,2, T. Yamada¹, K. Saito³, J. Gotoh³, T. Goto⁴, D. Nakamura¹, H. Ikenoue^1,2 (1.Graduate School of Information Science and Electrical Engineering, Kyushu Univ. (Japan), 2.Department of Gigaphoton Next GLP, Kyushu Univ. (Japan), 3.V-Technology Co., Ltd. (Japan), 4.New Industry Creation Hatchery Center, Tohoku Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.G-2-02

2019 International Conference on Solid State Devices and Materials

[G-2-02] Grain Growth Control with a Dot Mask in Selective Laser Annealing for Stable LTPS Thin Films Transistors Fabrication