16:15 〜 16:30

[G-4-04] Asymmetrical Voltage Driving for Memory Window Improvement of Flexible 1TFT-1RRAM Cells for Future Internet-of-Things Applications

^○A. Lebanov^1,2, A. Fantini¹, J. Genoe^1,2, P. Heremans^1,2, K. Myny¹ (1.imec (Belgium), 2.KU Leuven (Belgium))

https://doi.org/10.7567/SSDM.2019.G-4-04