09:15 〜 09:30

[G-5-02] Low-temperature (150 °C) Processed Metal-Semiconductor Field-Effect Transistor with Hydrogenated In–Ga–Zn–O Stacked Channel

^○Y. Magari¹, M. Aman¹, D. Koretomo¹, K. Masuda¹, K. Shimpo¹, M. Furuta^1,2 (1.Kochi Univ. of Tech. (Japan), 2.Center for Nanotech. (Japan))

https://doi.org/10.7567/SSDM.2019.G-5-02