16:00 〜 16:15

[H-2-02] Interface dipole modulation in ALD HfO₂/SiO₂ multi-stack MOS structures

^○S. Asanuma¹, K. Sumita¹, Y. Miyaguchi², K. Horita², T. Jimbo², K. Saito², N. Miyata¹ (1.AIST (Japan), 2.ULVAC Incorporated (Japan))

https://doi.org/10.7567/SSDM.2019.H-2-02