The Japan Society of Applied Physics

10:00 〜 10:15

[H-3-04] ZrO2 Anti-Ferroelectric Field Effect Transistor for Non-volatile Memory and Analog Synapse Applications

H. Liu1, S. Zheng1, G. Han1, Y. Xu1, Y. Liu1, C. Wang2, X. Wang2, N. Yang3, N. Zhong3, Y. Hao1 (1.Xidian Univ. (China), 2.Huazhong Univ. of Science and Technology (China), 3.East China Normal Univ. (China))

https://doi.org/10.7567/SSDM.2019.H-3-04