10:00 〜 10:15

[H-3-04] ZrO₂ Anti-Ferroelectric Field Effect Transistor for Non-volatile Memory and Analog Synapse Applications

^○H. Liu¹, S. Zheng¹, G. Han¹, Y. Xu¹, Y. Liu¹, C. Wang², X. Wang², N. Yang³, N. Zhong³, Y. Hao¹ (1.Xidian Univ. (China), 2.Huazhong Univ. of Science and Technology (China), 3.East China Normal Univ. (China))

https://doi.org/10.7567/SSDM.2019.H-3-04