10:15 〜 10:30

[H-3-05] Design Space Exploration of 1T Non-Volatile Ferroelectric FET Memory for Logic-In-Memory Applications

^○T.-Y. Ho¹, V.P.-H. Hu¹ (1.National Central Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2019.H-3-05