Cross-Coupled Differential Multiple-Time-Programming Memory Cells by CMOS FinFET Technologies

Y.-F. Chiang

doi:https://doi.org/10.7567/SSDM.2019.H-5-04

10:00 AM - 10:15 AM

[H-5-04] Cross-Coupled Differential Multiple-Time-Programming Memory Cells by CMOS FinFET Technologies

Y.-F. Chiang¹,^○C.-W. Chu¹, Y.-D. Chih², J. Chang², C.J. Lin¹, Y.-C. King¹ (1.National Tsing Hua Univ. (Taiwan), 2.Taiwan Semiconductor Manufacturing Company (Taiwan))

https://doi.org/10.7567/SSDM.2019.H-5-04

2019 International Conference on Solid State Devices and Materials

[H-5-04] Cross-Coupled Differential Multiple-Time-Programming Memory Cells by CMOS FinFET Technologies