High Aspect Ratio TSV Formation by Using Low-Cost, Electroless-Ni as Barrier and Seed Layers for 3D-LSI Integration and Packaging Applications

16:30 〜 16:45

[J-2-03 (Late News)] High Aspect Ratio TSV Formation by Using Low-Cost, Electroless-Ni as Barrier and Seed Layers for 3D-LSI Integration and Packaging Applications

^○M. Mariappan¹, K. Mori¹, A. Nakamura¹, H. Hashimoto¹, J.C. Bea¹, T. Fukushima¹, M. Koyanagi¹ (1.Tohoku Univ. (Japan))