The Japan Society of Applied Physics

16:30 〜 16:45

[J-2-03 (Late News)] High Aspect Ratio TSV Formation by Using Low-Cost, Electroless-Ni as Barrier and Seed Layers for 3D-LSI Integration and Packaging Applications

M. Mariappan1, K. Mori1, A. Nakamura1, H. Hashimoto1, J.C. Bea1, T. Fukushima1, M. Koyanagi1 (1.Tohoku Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.J-2-03