2:45 PM - 3:00 PM

[K-1-03] Suppression of Short-Channel Effects in Normally-off GaN MOSFETs with Deep Recessed-Gate Structure

^○D. Kato¹, Y. Kajiwara¹, A. Mukai¹, H. Ono¹, A. Shindome¹, J. Tajima¹, T. Hikosaka¹, M. Kuraguchi¹, S. Nunoue¹ (1.Toshiba Corp. (Japan))

https://doi.org/10.7567/SSDM.2019.K-1-03