The Japan Society of Applied Physics

14:45 〜 15:00

[K-1-03] Suppression of Short-Channel Effects in Normally-off GaN MOSFETs with Deep Recessed-Gate Structure

D. Kato1, Y. Kajiwara1, A. Mukai1, H. Ono1, A. Shindome1, J. Tajima1, T. Hikosaka1, M. Kuraguchi1, S. Nunoue1 (1.Toshiba Corp. (Japan))

https://doi.org/10.7567/SSDM.2019.K-1-03