The Japan Society of Applied Physics

3:00 PM - 3:15 PM

[K-1-04] Vertical PN Junction-based GaN Power Diode

J. Wang1,2, S. Jiang3, H. Zong3, Y. Liao2, T. Liu2, J. Shen2, Y. Ando2, Y. Honda2, X. Hu3, H. Amano2, Y.-H. Xie1 (1.Univ. of California, Los Angeles (USA), 2.Nagoya Univ. (Japan), 3.Peking Univ. (China))

https://doi.org/10.7567/SSDM.2019.K-1-04