15:00 〜 15:15

[K-1-04] Vertical PN Junction-based GaN Power Diode

^○J. Wang^1,2, S. Jiang³, H. Zong³, Y. Liao², T. Liu², J. Shen², Y. Ando², Y. Honda², X. Hu³, H. Amano², Y.-H. Xie¹ (1.Univ. of California, Los Angeles (USA), 2.Nagoya Univ. (Japan), 3.Peking Univ. (China))

https://doi.org/10.7567/SSDM.2019.K-1-04