The Japan Society of Applied Physics

16:30 〜 16:45

[K-4-04 (Late News)] High-Power GaN-on-Diamond HEMTs Fabricated by Surface-Activated Room-Temperature Bonding

S. Hiza1, M. Fujikawa1, Y. Takiguchi1, K. Nishimura1, E. Yagyu1, T. Matsumae2, Y. Kurashima2, H. Takagi2, M. Yamamuka1 (1.Mitsubishi Electric Corp. (Japan), 2.AIST (Japan))

https://doi.org/10.7567/SSDM.2019.K-4-04