High-Power GaN-on-Diamond HEMTs Fabricated by Surface-Activated Room-Temperature Bonding

S. Hiza

doi:https://doi.org/10.7567/SSDM.2019.K-4-04

16:30 〜 16:45

[K-4-04 (Late News)] High-Power GaN-on-Diamond HEMTs Fabricated by Surface-Activated Room-Temperature Bonding

^○S. Hiza¹, M. Fujikawa¹, Y. Takiguchi¹, K. Nishimura¹, E. Yagyu¹, T. Matsumae², Y. Kurashima², H. Takagi², M. Yamamuka¹ (1.Mitsubishi Electric Corp. (Japan), 2.AIST (Japan))

https://doi.org/10.7567/SSDM.2019.K-4-04

2019 International Conference on Solid State Devices and Materials

[K-4-04 (Late News)] High-Power GaN-on-Diamond HEMTs Fabricated by Surface-Activated Room-Temperature Bonding