09:45 〜 10:00

[K-5-03] (111) Vertical-type 2DHG Diamond MOSFETs with Hexagonal Trench Structures

^○J. Nishimura¹, M. Iwataki¹, N. Oi¹, A. Morishita¹, A. Hiraiwa¹, H. Kawarada^1,2 (1.Waseda Univ. (Japan), 2.The Kagami Memorial Lab. for Materials Sci. and Tech. (Japan))

https://doi.org/10.7567/SSDM.2019.K-5-03