11:30 〜 11:45

[K-6-04] Practical Extraction Method of Interface State Density near Conduction Band Edge of 4H-SiC MOSFET Channel

^○S. Sato¹, K. Kobayashi¹, Y. Mori¹, D. Hisamoto¹, A. Shima¹ (1.Hitachi Ltd. (Japan))

https://doi.org/10.7567/SSDM.2019.K-6-04