An Information Leakage Sensor Based on Measurement of Laser-Induced Opto-Electric Bulk Current Density

K. Matsuda

doi:https://doi.org/10.7567/SSDM.2019.M-1-03

15:00 〜 15:15

[M-1-03] An Information Leakage Sensor Based on Measurement of Laser-Induced Opto-Electric Bulk Current Density

^○K. Matsuda¹, S. Tada¹, M. Nagata¹, Y. Li², T. Sugawara², M. Iwamoto², K. Ohta², K. Sakiyama², N. Miura¹ (1.Kobe Univ. (Japan), 2.The Univ. of Electro-Communications (Japan))

https://doi.org/10.7567/SSDM.2019.M-1-03

2019 International Conference on Solid State Devices and Materials

[M-1-03] An Information Leakage Sensor Based on Measurement of Laser-Induced Opto-Electric Bulk Current Density