17:15 〜 17:30

[M-2-04] Low V_F 4H-SiC NiP Diodes Using Newly Developed Low Resistivity p-type Substrates

^○A. Koyama^1,2, M. Sometani¹, K. Takenaka^1,3, K. Nakayama¹, A. Miyasaka^4,1, K. Kojima¹, K. Eto¹, T. Kato¹, J. Senzaki¹, Y. Yonezawa¹, H. Okumura¹ (1.AIST (Japan), 2.Mitsubishi Electric Corp. (Japan), 3.Fuji Electric Co., Ltd. (Japan), 4.SHOWA DENKO K. K. (Japan))

https://doi.org/10.7567/SSDM.2019.M-2-04