The Japan Society of Applied Physics

2:45 PM - 3:00 PM

[N-1-03] Scaled, Novel Effective Workfunction Metal Gate Stacks for Advanced Low-VT, Gate-All-Around Vertically Stacked Nanosheet FETs with Reduced Vertical Distance between Sheets

A. Veloso1, E. Simoen1, A. Oliveira2, A. Chasin1, S.-C. Chen3, Y. Lin3, T. Miyashita3, M. Kim3, D. Jang1, R. Ritzenthaler1, X. Zhou1, H. Mertens1, V. Pena4, G. Santoro4, K. Kenis1, F. Sebaai1, G. Mannaert1, K. Devriendt1, T. Hopf1, J.J. Versluijs1, O. Richard1, J. Machillot4, N. Yoshida3, N. Horiguchi1 (1.Imec (Belgium), 2.Federal Univ. of Tech. Parana (Brazil), 3.Applied Materials (USA), 4.Applied Materials Belgium (Belgium))

https://doi.org/10.7567/SSDM.2019.N-1-03