Scaled, Novel Effective Workfunction Metal Gate Stacks for Advanced Low-V<sub>T</sub>, Gate-All-Around Vertically Stacked Nanosheet FETs with Reduced Vertical Distance between Sheets

A. Veloso

doi:https://doi.org/10.7567/SSDM.2019.N-1-03

2:45 PM - 3:00 PM

[N-1-03] Scaled, Novel Effective Workfunction Metal Gate Stacks for Advanced Low-V_T, Gate-All-Around Vertically Stacked Nanosheet FETs with Reduced Vertical Distance between Sheets

^○A. Veloso¹, E. Simoen¹, A. Oliveira², A. Chasin¹, S.-C. Chen³, Y. Lin³, T. Miyashita³, M. Kim³, D. Jang¹, R. Ritzenthaler¹, X. Zhou¹, H. Mertens¹, V. Pena⁴, G. Santoro⁴, K. Kenis¹, F. Sebaai¹, G. Mannaert¹, K. Devriendt¹, T. Hopf¹, J.J. Versluijs¹, O. Richard¹, J. Machillot⁴, N. Yoshida³, N. Horiguchi¹ (1.Imec (Belgium), 2.Federal Univ. of Tech. Parana (Brazil), 3.Applied Materials (USA), 4.Applied Materials Belgium (Belgium))

https://doi.org/10.7567/SSDM.2019.N-1-03

2019 International Conference on Solid State Devices and Materials

[N-1-03] Scaled, Novel Effective Workfunction Metal Gate Stacks for Advanced Low-VT, Gate-All-Around Vertically Stacked Nanosheet FETs with Reduced Vertical Distance between Sheets

[N-1-03] Scaled, Novel Effective Workfunction Metal Gate Stacks for Advanced Low-V_T, Gate-All-Around Vertically Stacked Nanosheet FETs with Reduced Vertical Distance between Sheets