16:15 〜 16:30

[N-2-03] Impact of Channel Flattening Process on Device Performance of Ge nMOSFETs with Different Surface Orientations

^○W. Chang¹, T. Irisawa¹, W. Mizubayashi¹, H. Ishii¹, N. Uchida¹, T. Maeda¹ (1.AIST (Japan))

https://doi.org/10.7567/SSDM.2019.N-2-03