16:30 〜 16:45

[N-2-04] 3D-stacked Highly Strained SiGe/Ge Gate-All-Around (GAA) pFETs Fabricated by 3D Ge Condensation

^○J. Suh¹, A.C. Meng¹, T.R. Kim¹, A.F. Marshall¹, A. Pakzad², P.C. McIntyre¹, K.C. Saraswat¹ (1.Stanford Univ. (USA), 2.Gatan Inc. (USA))

https://doi.org/10.7567/SSDM.2019.N-2-04