The Japan Society of Applied Physics

16:30 〜 16:45

[N-2-04] 3D-stacked Highly Strained SiGe/Ge Gate-All-Around (GAA) pFETs Fabricated by 3D Ge Condensation

J. Suh1, A.C. Meng1, T.R. Kim1, A.F. Marshall1, A. Pakzad2, P.C. McIntyre1, K.C. Saraswat1 (1.Stanford Univ. (USA), 2.Gatan Inc. (USA))

https://doi.org/10.7567/SSDM.2019.N-2-04