Electrical Properties of p-Channel Thin-Film Transistors Fabricated on High-Mobility Polycrystalline Ge on Glass

K. Moto

doi:https://doi.org/10.7567/SSDM.2019.N-2-05

4:45 PM - 5:00 PM

[N-2-05] Electrical Properties of p-Channel Thin-Film Transistors Fabricated on High-Mobility Polycrystalline Ge on Glass

^○K. Moto^1,2, K. Yamamoto³, T. Suemasu¹, H. Nakashima⁴, K. Toko¹ (1.Univ. of Tsukuba (Japan), 2.JSPS Res. Fellow (Japan), 3.IGSES, Kyushu Univ. (Japan), 4.GIC, Kyushu Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.N-2-05

2019 International Conference on Solid State Devices and Materials

[N-2-05] Electrical Properties of p-Channel Thin-Film Transistors Fabricated on High-Mobility Polycrystalline Ge on Glass