The Japan Society of Applied Physics

16:45 〜 17:00

[N-2-05] Electrical Properties of p-Channel Thin-Film Transistors Fabricated on High-Mobility Polycrystalline Ge on Glass

K. Moto1,2, K. Yamamoto3, T. Suemasu1, H. Nakashima4, K. Toko1 (1.Univ. of Tsukuba (Japan), 2.JSPS Res. Fellow (Japan), 3.IGSES, Kyushu Univ. (Japan), 4.GIC, Kyushu Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.N-2-05