4:45 PM - 5:00 PM
[N-2-05] Electrical Properties of p-Channel Thin-Film Transistors Fabricated on High-Mobility Polycrystalline Ge on Glass
○K. Moto1,2, K. Yamamoto3, T. Suemasu1, H. Nakashima4, K. Toko1
(1.Univ. of Tsukuba (Japan), 2.JSPS Res. Fellow (Japan), 3.IGSES, Kyushu Univ. (Japan), 4.GIC, Kyushu Univ. (Japan))
https://doi.org/10.7567/SSDM.2019.N-2-05