17:00 〜 17:15

[N-2-06] Experimental demonstration of n- and p-channel GaN MOSFETs operation for power IC

^○N.H. Trung¹, N. Taoka², H. Yamada¹, T. Takahashi¹, T. Yamada¹, M. Shimizu¹ (1.AIST-NU GaN-OIL (Japan), 2.Nagoya Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.N-2-06