Implementation of FeFET Memory Device Utilizing Highly Reliable Ferroelectric Hf0.5Zr0.5O2 Film with Embedded Al Nanoclusters

T. Ohara

doi:https://doi.org/10.7567/SSDM.2019.N-2-07

17:15 〜 17:30

[N-2-07 (Late News)] Implementation of FeFET Memory Device Utilizing Highly Reliable Ferroelectric Hf_0.5Zr_0.5O₂ Film with Embedded Al Nanoclusters

^○T. Ohara¹, T. Yamaguchi¹, T. Hayashi¹, K. Maekawa¹, M. Inoue¹, H. Yanagita¹, M. Matsuura¹, T. Yamashita¹ (1.Renesas Electronics Corp., Ltd. (Japan))

https://doi.org/10.7567/SSDM.2019.N-2-07

2019 International Conference on Solid State Devices and Materials

[N-2-07 (Late News)] Implementation of FeFET Memory Device Utilizing Highly Reliable Ferroelectric Hf0.5Zr0.5O2 Film with Embedded Al Nanoclusters

[N-2-07 (Late News)] Implementation of FeFET Memory Device Utilizing Highly Reliable Ferroelectric Hf_0.5Zr_0.5O₂ Film with Embedded Al Nanoclusters