The Japan Society of Applied Physics

17:15 〜 17:30

[N-2-07 (Late News)] Implementation of FeFET Memory Device Utilizing Highly Reliable Ferroelectric Hf0.5Zr0.5O2 Film with Embedded Al Nanoclusters

T. Ohara1, T. Yamaguchi1, T. Hayashi1, K. Maekawa1, M. Inoue1, H. Yanagita1, M. Matsuura1, T. Yamashita1 (1.Renesas Electronics Corp., Ltd. (Japan))

https://doi.org/10.7567/SSDM.2019.N-2-07