09:45 〜 10:00

[N-3-03] Performance improvement in ZnSnO/Si bilayer TFET by W/Al₂O₃ gate stack

^○K. Kato^1,2, H. Matsui², H. Tabata², T. Mori¹, Y. Morita¹, T. Matsukawa¹, M. Takenaka², S. Takagi² (1.AIST (Japan), 2.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2019.N-3-03