Demonstration of n- and p-TFET operations in a single ZnSnO/SiGe bilayer structure

K. Kato

doi:https://doi.org/10.7567/SSDM.2019.N-3-04

10:00 〜 10:15

[N-3-04] Demonstration of n- and p-TFET operations in a single ZnSnO/SiGe bilayer structure

^○K. Kato^1,2, K. Jo², H. Matsui², H. Tabata², T. Mori¹, Y. Morita¹, T. Matsukawa¹, M. Takenaka², S. Takagi² (1.AIST (Japan), 2.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2019.N-3-04

2019 International Conference on Solid State Devices and Materials

[N-3-04] Demonstration of n- and p-TFET operations in a single ZnSnO/SiGe bilayer structure