The Japan Society of Applied Physics

10:00 〜 10:15

[N-3-04] Demonstration of n- and p-TFET operations in a single ZnSnO/SiGe bilayer structure

K. Kato1,2, K. Jo2, H. Matsui2, H. Tabata2, T. Mori1, Y. Morita1, T. Matsukawa1, M. Takenaka2, S. Takagi2 (1.AIST (Japan), 2.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2019.N-3-04