Effects of hydrogen ion implantation dose on electrical and physical properties of (100) and (111) Ge-on-insulator substrates fabricated by Smart-cut process

16:15 〜 16:30

[N-4-03] Effects of hydrogen ion implantation dose on electrical and physical properties of (100) and (111) Ge-on-insulator substrates fabricated by Smart-cut process

^○C.-M. Lim¹, Z. Zhao¹, K. Sumita¹, K. Toprasertpong¹, M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo (Japan))