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[PS-1-06] Characteristics of Ni-silicided Schottky barrier MOSFET using Microwave annealing of low thermal budget

^○H.-S. Choi¹, E.-K. Hong¹, W.-J. Cho¹ (1.Univ. of Kwangwoon (Korea))

https://doi.org/10.7567/SSDM.2019.PS-1-06