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[PS-1-08] Low Temperature (<300°C) Fabrication of Ge MOS Structure for Advanced Electronic Devices

^○K. Iseri¹, W.-C. Wen¹, K. Yamamoto¹, D. Wang¹, H. Nakashima¹ (1.Kyushu Univ. (Japan))

https://doi.org/10.7567/SSDM.2019.PS-1-08